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UF1D

Daco Semiconductor

UF1D by Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

$0.400

Lifecycle Status

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5

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1k+

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DigiKey

USA . 4,996 parts In-Stock

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$0.155

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$0.073

4,996

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$0.073

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Nova Conductors

Japan . 76 parts In-Stock

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$0.116

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Vyrian

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EMSNET

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LittleDiode

UK . 2 parts In-Stock

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Bastille Electronics

Australia . 140 parts In-Stock

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$0.110

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$0.105

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140

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Kepictronics

USA . 29,981 parts In-Stock

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iodParts Technologies Inc.

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Technical Specifications

Diodes & Rectifiers UF1D attributes and parameters. Explore more Diodes & Rectifiers devices from Daco Semiconductor

Specs

Application:

EFFICIENCY

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

UF1D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Daco Semiconductor

DACO, established in 1994 , is the pioneer and innovative manufacturer of wafer and module device assembly in Taiwan dedicated in the designing, manufacturing of superior Semiconductor products covering discrete parts and modules of IGBT , SiC (Silicon Carbide) Diode , SiC (Silicon Carbide) MOSFET, Silicon Diode, Schottky, MOSFET and Thyristor. Cutting Edge Technology and Performance: The founder of DACO, who comes from the Semiconductor Research Center of National Science Council in Taiwan, is experienced in the fabrication of Metal Gat IC, Poly Gat IC, Power MOS, and Sipos GPP wafer. With the excellent technology, he has been leading DACO in an outstanding position in the trend of advanced technology in power electronic semiconductors. For the past years, DACO had been maintaining collaborative relationship with the companies serving military applications in researching and manufacturing high power rectifier modules on military specifications. In the recent years, our R&D team has been developing cutting edge technology to obtain various patents, and implementing vertical technology to upgrade the service to customers.

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