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ASS8550-L-HF

Comchip Technology

ASS8550-L-HF by Comchip Technology

Comchip Technology's ASS8550-L-HF is a PNP BJT with VCEsat of 0.5V, hFE of 120, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

Median Price

$0.390

Lifecycle Status

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Mouser Electronics

USA . 6,190 parts In-Stock

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$0.390

100+ parts

$0.171

1k+ parts

$0.079

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$0.047

6,190

$0.390

$0.171

$0.079

$0.047

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Nova Conductors

Japan . 300 parts In-Stock

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$0.076

100+ parts

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300

$0.076

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Vyrian

USA . 1,885 parts In-Stock

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1,885

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Netroflash

USA . 500 parts In-Stock

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$0.076

100+ parts

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10k+ parts

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500

$0.076

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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100+ parts

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2,000

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Overview

Discover the ASS8550-L-HF by Comchip Technology, a top-quality Small Signal Bipolar Junction Transistor ideal for various applications. With its PNP polarity and single configuration, this transistor offers exceptional performance with a maximum VCEsat of only 0.5V. Designed with a compact package style and gull wing terminals, this transistor is easy to install and operates efficiently at temperatures up to 150°C. Trust in Comchip Technology's reputation for excellence and innovation, and experience the value and benefits that the ASS8550-L-HF brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making this transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuits that require this polarity.

Configuration: SINGLE

A single configuration simplifies circuit design and assembly processes.

Surface Mount: YES

The surface mount capability enables easy, convenient PCB mounting for space-constrained applications.

Maximum VCEsat: 0.5 V

With a low VCEsat value, this transistor helps minimize power loss and enhance efficiency in operation.

Package Shape: RECTANGULAR

The rectangular shape allows for compact integration in tight spaces.

Terminal Form: GULL WING

The gull wing terminals make soldering easy and reliable for manufacturing purposes.

No. of Terminals: 3

A limited number of terminals reduces the chance of wiring errors and simplifies connections.

Maximum Power Dissipation (Abs): 0.3 W

This high power dissipation value ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB for a more compact overall design.

Maximum Power Dissipation Ambient: 0.3 W

The high ambient power dissipation rating allows for reliable performance in varying environmental conditions.

Minimum DC Current Gain (hFE): 120

A high minimum hFE value ensures consistent performance and reliable amplification capabilities.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this transistor suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 25 V

With a high VCE value, this transistor can handle high voltage applications reliably.

Transistor Element Material: SILICON

The silicon material ensures excellent performance and reliability over a wide range of operating conditions.

Maximum Collector Current (IC): 1.5 A

A high collector current rating allows this transistor to handle high-power applications with ease.

Terminal Position: DUAL

The dual terminal position provides flexibility in mounting options for various circuit configurations.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, ensuring high reliability for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

With a high transition frequency, this transistor is suitable for high-frequency signal amplification and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ASS8550-L-HF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Comchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

ASS8550-L-HF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Comchip Technology

Established in 2000, Comchip strives to become the leading global semiconductor solution provider, delivering solutions and support with cost and quality advantages. Based in Taiwan, Comchip is constantly expanding in key locations around the world to provide direct, superior customer service, with sales offices located in China, Silicon Valley and New York. With innovative research and patented manufacturing capabilities, Comchip offers products including bridge rectifiers, fast efficient rectifiers, switching diodes, Zener diodes, Schottky diodes, TVS and ESD surge protectors. Recent expansion of product offering also includes power semiconductor devices including transistor and MOSFET solutions. Comchip products cover a vast array of applications in the electronics industry including lighting, automotive, industrial computers, TFT-LCD panels, network/telecom, medical, and consumer electronics. To ensure superior quality and reliability, Comchip’s in-house labs and production facilities are aligned with current automotive industry requirements in accordance with industry standards including AEC-Q101, TS16949, ISO9001, and ISO14001.

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