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GBU25J

Changzhou Galaxy Century Microelectronics

GBU25J by Changzhou Galaxy Century Microelectronics

GBU25J by Changzhou Galaxy Century Microelectronics is a BRIDGE RECTIFIER DIODE with 4 elements, capable of handling up to 25A output current and 600V peak reverse voltage. With a max operating temperature of 150°C, it is ideal for applications requiring high power rectification such as industrial equipment and power supplies.

Median Price

$0.420

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 240 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.420

10k+ parts

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240

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$0.420

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Distributors (In-Stock)

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TME

Poland . 240 parts In-Stock

1+ parts

$0.799

100+ parts

$0.360

1k+ parts

$0.336

10k+ parts

-

240

$0.799

$0.360

$0.336

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Vyrian

USA . 1,134 parts In-Stock

1+ parts

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1,134

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 654 parts In-Stock

1+ parts

$10.979

100+ parts

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654

$10.979

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Argo Parts USA

USA . 4,298 parts In-Stock

1+ parts

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4,298

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Continental Prestige Electronics

USA . 810 parts In-Stock

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810

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Upgrade your electronics with the GBU25J by Changzhou Galaxy Century Microelectronics, a top-quality bridge rectifier diode that delivers reliable performance and efficiency. Manufactured by a trusted name in the industry, this product is designed for a wide range of applications, offering superior functionality and durability. Experience the benefits of smooth power conversion, reduced energy consumption, and enhanced circuit protection with the GBU25J. Trust in Changzhou Galaxy Century Microelectronics to provide you with the value and quality you deserve.

Feature Benefit Bullets

Config BRIDGE, 4 ELEMENTS

Having 4 elements in a bridge configuration ensures efficient rectification of AC to DC, making it a reliable choice for power conversion applications.

Maximum Operating Temperature 150 °C

With a high maximum operating temperature of 150°C, this bridge rectifier diode can withstand heat stress in various operating conditions, ensuring stability and longevity.

Peak Reflow Temperature °C 260

The high peak reflow temperature of 260°C allows for easy soldering during assembly, improving the manufacturing process efficiency.

Diode Type BRIDGE RECTIFIER DIODE

Being a bridge rectifier diode, it is designed for full-wave rectification, enabling it to convert both halves of an AC waveform into DC, providing a smoother output compared to half-wave rectification.

Maximum Forward Voltage (VF) 1 V

With a low maximum forward voltage of 1V, this bridge rectifier diode minimizes power loss and heat generation, contributing to energy efficiency.

Maximum Output Current 25 A

Capable of handling a maximum output current of 25A, this bridge rectifier diode is suitable for high-power applications where a significant amount of current is required.

No. of Elements 4

Having 4 diode elements in the bridge configuration allows for higher current handling capacity and better reliability in power conversion applications.

Maximum Repetitive Peak Reverse Voltage 600 V

With a high maximum repetitive peak reverse voltage of 600V, this bridge rectifier diode can withstand high reverse voltage spikes, making it suitable for demanding environments.

Maximum Non Repetitive Peak Forward Current 240 A

The ability to handle a maximum non-repetitive peak forward current of 240A ensures high surge current capability, making this bridge rectifier diode reliable in fluctuating load conditions.

Diode Element Material SILICON

Silicon diode elements offer high reliability, low leakage current, and stable performance over a wide range of temperatures, making this bridge rectifier diode a durable choice for various applications.

Technical Specifications

Bridge Rectifier Diodes GBU25J attributes and parameters. Explore more Bridge Rectifier Diodes devices from Changzhou Galaxy Century Microelectronics

Specs

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

Maximum Non Repetitive Peak Forward Current:

240 A

No. of Elements:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

25 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Trade Compliance

GBU25J Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Changzhou Galaxy Century Microelectronics

Galaxy is an IDM semiconductor company focusing on the R&D, manufacture and sales of discrete devices. The main products include all kinds of Diodes, SiC, MOSFETs, Transistors, Analog ICs, Photocouplers, LEDs and other discrete semiconductor devices. We can provide customers with series products and technical solutions with high applicability and reliability to meet their one-stop purchasing needs. Our products are widely used in computers and peripherals, household appliances, adapters and power supplies, network communications, automotive electronics, industrial control and many other fields

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