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2N5087TRAPBFREE

Central Semiconductor

2N5087TRAPBFREE by Central Semiconductor

2N5087TRAPBFREE by Central Semiconductor is a PNP BJT with VCEsat of 0.3V, hFE of 250, and IC of 0.05A. Ideal for amplifier applications, it has a max operating temp of 150°C and fT of 40MHz. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: WIRE.

Median Price

$0.870

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,034 parts In-Stock

1+ parts

$0.870

100+ parts

$0.365

1k+ parts

$0.239

10k+ parts

$0.177

4,034

$0.870

$0.365

$0.239

$0.177

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.233

4,000

-

-

-

$0.233

NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.400

4,000

-

-

-

$0.400

Overview

Upgrade your electronic projects with the 2N5087TRAPBFREE from Central Semiconductor, a high-quality Power Bipolar Junction Transistor perfect for amplifier applications. With a single PNP configuration and a maximum VCEsat of only 0.3V, this transistor offers superior performance and reliability. Trust in Central Semiconductor's expertise in producing top-notch components to ensure your designs stand out. Explore the endless possibilities this versatile transistor brings to your projects and experience the value and benefits it provides. Step up your game with the 2N5087TRAPBFREE today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

A single configuration simplifies the design and reduces complexity in circuit layouts.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Maximum VCEsat: 0.3 V

Low VCEsat helps in minimizing power loss and improving efficiency in the circuit.

Package Shape: ROUND

The round package shape is compact and easy to handle, suitable for various mounting options.

Terminal Form: WIRE

Wire terminals provide a secure and reliable connection in the circuit.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and reduces the chances of errors in circuit assembly.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, the transistor can handle higher power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient heat dissipation and compact design.

Maximum Power Dissipation Ambient: 1.5 W

The maximum ambient power dissipation rating ensures the transistor can operate safely in diverse environmental conditions.

Minimum DC Current Gain (hFE): 250

A high DC current gain ensures proper amplification in the circuit and reliable performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures during operation.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance helps in minimizing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides a safety margin for the transistor in various circuit configurations.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stable and consistent performance.

Minimum Operating Temperature: -65 °C

The wide temperature range allows the transistor to operate in extreme cold conditions without performance degradation.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current rating, the transistor can handle higher current levels in the circuit.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connection in PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 30

The specified reflow time ensures proper soldering and reliability during assembly processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature rating allows for secure solder joints without damaging the transistor.

Nominal Transition Frequency (fT): 40 MHz

A high transition frequency indicates the transistor's ability to operate at higher frequencies, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5087TRAPBFREE attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2N5087TRAPBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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