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APT13003EZTR-E1

Bcd Semiconductor Manufacturing

APT13003EZTR-E1 by Bcd Semiconductor Manufacturing

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Peak Reflow Temperature (C): NOT SPECIFIED;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 142 parts In-Stock

1+ parts

$0.192

100+ parts

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$0.184

142

$0.192

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$0.184

Northwest PG Solutions

USA . 2,317 parts In-Stock

1+ parts

$0.211

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$0.186

2,317

$0.211

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$0.186

Andel Nordic

Denmark . 1,485 parts In-Stock

1+ parts

$10.148

100+ parts

-

1k+ parts

$9.742

10k+ parts

$9.742

1,485

$10.148

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$9.742

$9.742

Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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S.R.D Solutions

India . 3,000 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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2,240

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Futuretech Components

Singapore . 955 parts In-Stock

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955

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Robosynatics

Brazil . 100 parts In-Stock

1+ parts

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100+ parts

$0.832

1k+ parts

$0.770

10k+ parts

$0.770

100

-

$0.832

$0.770

$0.770

Lucentia Tech

USA . 100 parts In-Stock

1+ parts

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100+ parts

$0.832

1k+ parts

$0.770

10k+ parts

$0.770

100

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$0.832

$0.770

$0.770

Technical Specifications

Power Bipolar Junction Transistors (BJT) APT13003EZTR-E1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Bcd Semiconductor Manufacturing

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

465 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

APT13003EZTR-E1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Bcd Semiconductor Manufacturing

Diodes Incorporated to Acquire BCD Semiconductor Manufacturing Limited December 26, 2012 | Plano, Texas Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, and BCD Semiconductor Manufacturing Limited ("BCD Semiconductor" or "BCD") (Nasdaq: BCDS), a leading analog integrated device manufacturer incorporated in the Cayman Islands, today announced that Diodes has entered into an Agreement and Plan of Merger to acquire BCD. BCD Semiconductor Manufacturing Limited (BCD Semi) is a leading analog integrated device manufacturer, or IDM, based in Greater China, specializing in the design, manufacture and sale of power management integrated circuits, or ICs. The company's broad portfolio of power management ICs primarily targets rapidly growing, high volume markets such as mobile phones, portable media players, LCD televisions and monitors, personal computers, adapters and chargers and other electronics products. As an IDM, BCD Semi integrates product design and process technology to optimize product performance and cost. The company offers system-level solutions with the quality, performance and reliability required by our customers. Our Greater China-based operations provide proximity to the rapidly growing electronics industry in Asia, enabling us to align our product development effort with customers and market trends and to provide timely and effective technical support to its customers.

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