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APT13003EU-G1

Bcd Semiconductor Manufacturing

APT13003EU-G1 by Bcd Semiconductor Manufacturing

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 418 parts In-Stock

1+ parts

$98.810

100+ parts

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$94.858

418

$98.810

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$94.858

Component Stockers USA

USA . 626 parts In-Stock

1+ parts

$99.990

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626

$99.990

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Northwest PG Solutions

USA . 2,260 parts In-Stock

1+ parts

$108.691

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2,260

$108.691

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

1+ parts

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70,000

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QUARKTWIN TECHNOLOGY LTD

USA . 8,541 parts In-Stock

1+ parts

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8,541

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Futuretech Components

Singapore . 397 parts In-Stock

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397

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Technical Specifications

Power Bipolar Junction Transistors (BJT) APT13003EU-G1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Bcd Semiconductor Manufacturing

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

465 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

APT13003EU-G1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Bcd Semiconductor Manufacturing

Diodes Incorporated to Acquire BCD Semiconductor Manufacturing Limited December 26, 2012 | Plano, Texas Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, and BCD Semiconductor Manufacturing Limited ("BCD Semiconductor" or "BCD") (Nasdaq: BCDS), a leading analog integrated device manufacturer incorporated in the Cayman Islands, today announced that Diodes has entered into an Agreement and Plan of Merger to acquire BCD. BCD Semiconductor Manufacturing Limited (BCD Semi) is a leading analog integrated device manufacturer, or IDM, based in Greater China, specializing in the design, manufacture and sale of power management integrated circuits, or ICs. The company's broad portfolio of power management ICs primarily targets rapidly growing, high volume markets such as mobile phones, portable media players, LCD televisions and monitors, personal computers, adapters and chargers and other electronics products. As an IDM, BCD Semi integrates product design and process technology to optimize product performance and cost. The company offers system-level solutions with the quality, performance and reliability required by our customers. Our Greater China-based operations provide proximity to the rapidly growing electronics industry in Asia, enabling us to align our product development effort with customers and market trends and to provide timely and effective technical support to its customers.

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