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MA4L021-30

Asi Semiconductor

MA4L021-30 by Asi Semiconductor

PIN DIODE; Surface Mount: YES; Minimum Breakdown Voltage: 30 V; Reverse Test Voltage: 0 V; Maximum Diode Forward Resistance: 1.5 ohm; Maximum Operating Temperature: 125 Cel;

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In-Stock Inventory

< 1k

MA4L021-30 by Asi Semiconductor
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Technical Specifications

PIN Diodes MA4L021-30 attributes and parameters. Explore more PIN Diodes devices from Asi Semiconductor

Specs

Minimum Breakdown Voltage:

30 V

Nominal Diode Capacitance:

.4 pF

Maximum Diode Forward Resistance:

1.5 ohm

Diode Resistive Test Current:

10 mA

Diode Resistive Test Frequency:

500 MHz

Diode Type:

Nominal Minority Carrier Lifetime:

.01 us

No. of Elements:

1

Maximum Operating Temperature:

125 Cel

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Trade Compliance

MA4L021-30 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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