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HMC549MS8GETR

Analog Devices

HMC549MS8GETR by Analog Devices

Analog Devices' HMC549MS8GETR is a GaAs RF amplifier with 5V power supply, operating from -40 °C to 85°C. It features wideband low power technology, surface mounting, and matte tin terminal finish. Ideal for RF and microwave applications requiring high performance in a compact plastic package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,297 parts In-Stock

1+ parts

-

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6,297

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Digiode

USA . 822 parts In-Stock

1+ parts

-

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822

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Bristol Electronics

USA . 394 parts In-Stock

1+ parts

-

100+ parts

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394

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Dan-Mar Components

USA . 394 parts In-Stock

1+ parts

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394

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 789 parts In-Stock

1+ parts

$1.256

100+ parts

-

1k+ parts

$1.168

10k+ parts

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789

$1.256

-

$1.168

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IDEA Electronic Components Group

UK . 2,326 parts In-Stock

1+ parts

$1.350

100+ parts

-

1k+ parts

$1.282

10k+ parts

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2,326

$1.350

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$1.282

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DigiPath Technology Company

USA . 241 parts In-Stock

1+ parts

$2.106

100+ parts

$2.022

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-

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241

$2.106

$2.022

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Semicontronic

India . 987 parts In-Stock

1+ parts

$4.000

100+ parts

$3.900

1k+ parts

$3.880

10k+ parts

-

987

$4.000

$3.900

$3.880

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AZTECH Wire

Italy . 896 parts In-Stock

1+ parts

$15.746

100+ parts

-

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896

$15.746

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One Stop Electronics

USA . 1,128 parts In-Stock

1+ parts

$28.000

100+ parts

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1,128

$28.000

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QUARKTWIN TECHNOLOGY LTD

USA . 24,221 parts In-Stock

1+ parts

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24,221

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Perfect Parts

USA . 1,680 parts In-Stock

1+ parts

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1,680

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Corphita

USA . 945 parts In-Stock

1+ parts

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945

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Overview

Elevate your RF and microwave amplifier performance with the HMC549MS8GETR from Analog Devices. Known for their industry-leading quality and innovation, Analog Devices delivers top-notch products that exceed expectations. Whether you're in the aerospace, defense, or telecommunications industry, this wideband low-power amplifier offers unmatched value, reliability, and flexibility. With a temperature range of -40 °C to 85°C and a matte tin finish for durability, trust Analog Devices to elevate your RF and microwave system to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the amplifier lightweight and cost-effective, while still providing adequate protection for the internal components.

Power Supplies (V): 5

Operating at a low voltage of 5V makes this amplifier energy-efficient and suitable for a wide range of applications without the need for high power consumption.

No. of Terminals: 8

Having 8 terminals allows for versatile connectivity options and potentially more functionality, making it easier to integrate this amplifier into different systems.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this amplifier can withstand high temperatures and operate reliably in challenging environments.

Minimum Operating Temperature: -40 °C

The ability to operate in temperatures as low as -40 °C makes this amplifier suitable for use in a wide range of climates and conditions.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides good conductivity and durability, ensuring a stable connection and reliable performance over time.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology allows this amplifier to offer high performance, low noise, and high linearity, making it ideal for RF and microwave applications.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band low power amplifier means that it can amplify signals across a broad frequency range while consuming minimal power, making it versatile and efficient.

Mounting Feature: SURFACE MOUNT

The surface mounting feature makes it easy to install and integrate this amplifier into a circuit board, saving space and simplifying the assembly process.

Technical Specifications

RF & Microwave Amplifiers HMC549MS8GETR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP8,.19

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

HMC549MS8GETR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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