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HMC541LP3E

Analog Devices

HMC541LP3E by Analog Devices

Analog Devices' HMC541LP3E is a RF/Microwave Attenuator with 10 dB Nominal Attenuation, 26.99 dBm Max Input Power (CW), and 2.3 dB Max Insertion Loss. This GAAS technology-based variable attenuator operates from 0 to 5000 MHz, ideal for applications requiring precise signal control in high-frequency circuits.

Median Price

$2.330

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

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$2.330

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$2.080

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$1.960

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$1.960

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Vyrian

USA . 6,946 parts In-Stock

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Digiode

USA . 479 parts In-Stock

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Semi Source

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ECAB

Sweden . 41 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Parana Technologies

USA . 2,126 parts In-Stock

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$2.457

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$2.285

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IDEA Electronic Components Group

UK . 1,364 parts In-Stock

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$2.642

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$2.510

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DigiPath Technology Company

USA . 233 parts In-Stock

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$4.122

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$3.957

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One Stop Electronics

USA . 1,473 parts In-Stock

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$8.000

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AZTECH Wire

Italy . 338 parts In-Stock

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$18.878

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Semicontronic

India . 1,338 parts In-Stock

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$29.000

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$28.275

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$28.130

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Perfect Parts

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RC Electronics

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Corphita

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Overview

Elevate your RF/Microwave applications with the HMC541LP3E by Analog Devices. Crafted with precision using cutting-edge technology, this variable attenuator offers a nominal attenuation of 10 dB and a maximum insertion loss of only 2.3 dB, ensuring top-notch performance. With a rugged construction and a wide operating temperature range, this component is designed to excel in diverse settings. Whether you're in the aerospace, defense, or telecommunications industry, this high-quality product provides unmatched value, reliability, and flexibility for your projects. Trust Analog Devices to deliver excellence in every detail.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the attenuator.

Maximum Input Power (CW): 26.99 dBm

Capable of handling high input power levels, making it suitable for demanding RF/microwave applications.

Nominal Attenuation: 10 dB

Offers a consistent level of signal attenuation, allowing for precise control over the signal strength.

Construction: COMPONENT

Constructed using quality components, ensuring reliable performance and accuracy.

Power Supplies (V): 5

Operates on a standard voltage supply, making it easy to integrate into existing systems.

No. of Terminals: 16

Provides multiple connection points for versatile connectivity options.

Maximum Operating Temperature: 85 °C

Can operate in high temperature environments without any issues, increasing its adaptability.

Minimum Operating Temperature: -40 °C

Can operate in low temperature environments, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Provides a durable and corrosion-resistant finish for the terminals, ensuring long-term reliability.

Maximum Insertion Loss: 2.3 dB

Minimal signal loss when passing through the attenuator, maintaining signal integrity.

Technology: GAAS

Utilizes Gallium Arsenide technology for high-performance RF/microwave signal attenuation.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Allows for adjustable signal attenuation, providing flexibility in controlling signal strength.

Characteristic Impedance: 50 ohm

Matches common impedance levels in RF/microwave systems, ensuring proper signal transfer.

Minimum Operating Frequency: 0 MHz

Can handle signals from DC and above, covering a wide frequency range.

Mounting Feature: SURFACE MOUNT

Easy to mount on circuit boards, saving space and simplifying installation.

Maximum Operating Frequency: 5000 MHz

Can handle high-frequency signals, suitable for a variety of RF/microwave applications.

Technical Specifications

RF/Microwave Attenuators HMC541LP3E attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Additional Features:

CMOS COMPATIBLE

Nominal Attenuation:

10 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

26.99 dBm

Maximum Insertion Loss:

2.3 dB

JESD-609 Code:

e3

Mounting Feature:

No. of Terminals:

16

Maximum Operating Frequency:

5000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC16,.12SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

HMC541LP3E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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