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HMC232G7

Analog Devices

HMC232G7 by Analog Devices

Analog Devices' HMC232G7 is a GAAS SPDT RF switch with 50 ohm impedance, offering 37 dB isolation and 2.3 dB insertion loss up to 6 GHz. With a max input power of 30 dBm, it's ideal for high-frequency applications requiring fast 0.006 us switching times in temperatures ranging from -40°C to 85°C.

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Vyrian

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Digiode

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Nova Conductors

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Chip Stock

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Corohmni

South Africa . 825 parts In-Stock

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Semicontronic

India . 491 parts In-Stock

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Parana Technologies

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IDEA Electronic Components Group

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DigiPath Technology Company

USA . 2,172 parts In-Stock

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AZTECH Wire

Italy . 255 parts In-Stock

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One Stop Electronics

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Ampacity Inc.

Singapore . 1,414 parts In-Stock

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Lixinc

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Corphita

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Overview

Elevate your RF/Microwave system with the HMC232G7 by Analog Devices, a top-of-the-line SPDT switch that promises superior performance and reliability. Crafted with precision using cutting-edge GaAs technology, this component boasts a remarkable 37 dB minimum isolation and a maximum insertion loss of only 2.3 dB. With a wide operating frequency range of 0-6000 MHz, this switch is ideal for various applications in the aerospace, defense, and telecommunications industries. Trust Analog Devices to deliver unparalleled quality and innovation in every product, ensuring that you stay ahead of the competition. Choose the HMC232G7 and experience seamless connectivity and unmatched efficiency like never before.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and ensures long-term reliability, making this product suitable for harsh environmental conditions.

Maximum Input Power (CW): 30 dBm

The high maximum input power allows for handling of strong input signals without damaging the device, making it suitable for high-power applications.

Compression Point (1 dB): 27 dBm

The high compression point indicates the ability to maintain linearity and low distortion even at high input power levels, ensuring signal integrity.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for flexibility in deployment and usage in various temperature environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in cold conditions, making it suitable for diverse operating environments.

Terminal Finish: Gold (Au) - with Nickel (Ni) barrier

Gold with Nickel barrier provides excellent conductivity and corrosion resistance, enhancing signal transmission and ensuring long-term performance.

Maximum Insertion Loss: 2.3 dB

Low insertion loss indicates minimal signal loss during switching, maintaining signal quality and integrity in the system.

Nominal On Time: 0.006 us

Fast switching time ensures quick response and seamless operation in applications requiring rapid signal switching.

Technology: GAAS

Gallium Arsenide (GaAs) technology offers high-frequency performance, low noise figure, and high linearity, making it ideal for RF and microwave applications.

RF or Microwave Device Type: SPDT

Single-Pole Double-Throw configuration offers versatile signal routing options, enabling flexibility in system design and functionality.

Minimum Isolation: 37 dB

High isolation prevents signal leakage between the ports, ensuring minimal interference and crosstalk for improved signal purity.

Maximum Operating Frequency: 6000 MHz

Wide operating frequency range enables compatibility with various RF and microwave applications, offering flexibility in system design and integration.

Port Termination: ABSORPTIVE

Absorptive port termination reduces signal reflections and improves impedance matching, enhancing signal integrity and minimizing signal loss.

Technical Specifications

RF/Microwave Switches HMC232G7 attributes and parameters. Explore more RF/Microwave Switches devices from Analog Devices

Specs

Compression Point (1 dB):

27 dBm

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

Maximum Insertion Loss:

2.3 dB

Minimum Isolation:

37 dB

JESD-609 Code:

e4

No. of Functions:

1

Nominal On Time:

.006 us

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

MODULE(UNSPEC)

Port Termination:

ABSORPTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Terminal Finish:

Gold (Au) - with Nickel (Ni) barrier

Trade Compliance

HMC232G7 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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