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HMC174MS8RTR

Analog Devices

HMC174MS8RTR by Analog Devices

Analog Devices' HMC174MS8RTR is a GAAS transfer switch with 1.8 dB max insertion loss, 15 dB min isolation, and 36 dBm compression point. Ideal for RF applications up to 3000 MHz, it features a surface mount package with tin/lead terminals for high-frequency signal routing.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,295 parts In-Stock

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8,295

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Digiode

USA . 514 parts In-Stock

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514

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,217 parts In-Stock

1+ parts

$1.402

100+ parts

-

1k+ parts

$1.303

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1,217

$1.402

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$1.303

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IDEA Electronic Components Group

UK . 2,269 parts In-Stock

1+ parts

$1.507

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$1.432

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2,269

$1.507

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$1.432

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DigiPath Technology Company

USA . 2,229 parts In-Stock

1+ parts

$2.351

100+ parts

$2.257

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2,229

$2.351

$2.257

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One Stop Electronics

USA . 901 parts In-Stock

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$6.000

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901

$6.000

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Semicontronic

India . 441 parts In-Stock

1+ parts

$12.000

100+ parts

$11.700

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$11.640

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441

$12.000

$11.700

$11.640

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AZTECH Wire

Italy . 672 parts In-Stock

1+ parts

$17.229

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672

$17.229

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Ampacity Inc.

Singapore . 427 parts In-Stock

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$40.000

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427

$40.000

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Corphita

USA . 376 parts In-Stock

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Overview

Unlock the power of seamless RF/Microwave switching with the HMC174MS8RTR by Analog Devices. Designed with precision and reliability in mind, this transfer switch offers a wide range of applications for your electronic needs. From telecommunications to aerospace, this versatile device ensures optimal performance and maximum efficiency. Experience superior quality and performance with the trusted manufacturer, Analog Devices. Make the smart choice for your projects and elevate your designs with the HMC174MS8RTR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures lightweight and durable construction, making it ideal for portable and rugged applications.

Compression Point (1 dB): 36 dBm

High compression point allows for handling of high power levels without distortion, ensuring reliable performance in high-power RF applications.

Power Supplies (V): 5

Operates on a standard 5V power supply, making it compatible with most systems and easy to integrate.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting to various components and allows for more complex switching configurations.

Maximum Operating Temperature: 85 °C

Wide operating temperature range of -40 to 85 °C enables reliable operation in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

Can withstand low temperatures, ensuring performance in cold environments without compromising functionality.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish ensures good conductivity and solderability, making it easy to install and maintain.

Maximum Insertion Loss: 1.8 dB

Low insertion loss results in minimal signal degradation, maintaining signal integrity in RF and microwave applications.

Nominal On Time: 0.024 us

Fast switching speed of 0.024 microseconds ensures quick response time, making it suitable for high-speed applications.

Technology: GAAS

Gallium Arsenide (GaAs) technology offers high linearity and low noise performance, providing superior RF switching capabilities.

RF or Microwave Device Type: TRANSFER SWITCH

The transfer switch design allows for seamless switching between RF signals, providing flexibility in routing signals and minimizing signal loss.

Minimum Isolation: 15 dB

High isolation of 15 dB minimizes signal leakage between ports, ensuring clean and reliable signal routing.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies installation and allows for easy integration into compact electronic systems.

Maximum Operating Frequency: 3000 MHz

With a high operating frequency of 3000 MHz, it is suitable for high-frequency RF and microwave applications.

Port Termination: REFLECTIVE

Reflective port termination reduces reflections and signal loss, optimizing signal transmission and reception.

Technical Specifications

RF/Microwave Switches HMC174MS8RTR attributes and parameters. Explore more RF/Microwave Switches devices from Analog Devices

Specs

Compression Point (1 dB):

36 dBm

Maximum Insertion Loss:

1.8 dB

Minimum Isolation:

15 dB

JESD-609 Code:

e0

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Nominal On Time:

.024 us

Maximum Operating Frequency:

3000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP8,.19

Port Termination:

REFLECTIVE

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Terminal Finish:

Tin/Lead (Sn/Pb)

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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