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AS6C4008-55TINTR

Alliance Memory

AS6C4008-55TINTR by Alliance Memory

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Standby Voltage: 1.5 V;

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Assy Fe

Spain . 2,000 parts In-Stock

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2,000

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Kepictronics

USA . 1,823 parts In-Stock

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1,823

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Technical Specifications

SRAM AS6C4008-55TINTR attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Standby Current:

.00003 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

60 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Trade Compliance

AS6C4008-55TINTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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