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43.1 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTTFS4937NTAG by Onsemi

NTTFS4937NTAG

Onsemi

NTTFS4937NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A ID, and 0.007 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package with NO LEAD terminals features a BUILT-IN DIODE and DUAL terminal position.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

11 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

S-XDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

43.1 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTTFS4937NTWG by Onsemi

NTTFS4937NTWG

Onsemi

NTTFS4937NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.007 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package features a BUILT-IN DIODE and NO LEAD terminals for surface mount assembly.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

11 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

S-XDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

43.1 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON