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3.5 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PCP1405-TD-H by Onsemi

PCP1405-TD-H

Onsemi

The Onsemi PCP1405-TD-H is a N-CHANNEL FET with 0.6A max drain current and 3.5W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic devices requiring high temperature tolerance.

SINGLE

.6 A

.6 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

260

N-CHANNEL

3.5 W

FET General Purpose Power

YES

TIN BISMUTH

30

PCP1402-TD-H by Onsemi

PCP1402-TD-H

Onsemi

PCP1402-TD-H by Onsemi is a N-CHANNEL FET with 1.2A max drain current and 3.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as in surface mount configurations for compact electronic devices.

SINGLE

1.2 A

1.2 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

260

N-CHANNEL

3.5 W

FET General Purpose Power

YES

TIN BISMUTH

30

PCP1302-TD-H by Onsemi

PCP1302-TD-H

Onsemi

PCP1302-TD-H by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, 3A ID, and 0.266 ohm RDS. It's used in enhancement mode applications with a max power dissipation of 3.5W at 150°C, featuring a small outline package style for surface mount assembly.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.266 ohm

METAL-OXIDE SEMICONDUCTOR

TO-243AA

R-PSSO-F3

e6

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

3.5 W

Other Transistors

YES

TIN BISMUTH

FLAT

SINGLE

30

SILICON

PCP1403-TD-H by Onsemi

PCP1403-TD-H

Onsemi

PCP1403-TD-H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 4.5A Drain Current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 3.5W. Suitable for surface mount designs in various electronic circuits.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

4.5 A

4.5 A

.117 ohm

METAL-OXIDE SEMICONDUCTOR

TO-243AA

R-PSSO-F3

e6

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.5 W

FET General Purpose Power

YES

TIN BISMUTH

FLAT

SINGLE

30

SILICON