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21.5 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTTFS4C13NTAG by Onsemi

NTTFS4C13NTAG

Onsemi

NTTFS4C13NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 38A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.0094 ohm On Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 21.5W and can withstand temperatures up to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

38 A

7.2 A

.0094 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

21.5 W

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SWITCHING

SILICON

NTTFS4C13NTWG by Onsemi

NTTFS4C13NTWG

Onsemi

NTTFS4C13NTWG by Onsemi is a N-channel FET with 30V DS breakdown voltage and 38A max drain current. Ideal for switching applications, it features a built-in diode, 0.0094 ohm RDS(on), and operates in enhancement mode. With a small outline package style and max power dissipation of 21.5W, it is suitable for high-temperature environments up to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

38 A

7.2 A

.0094 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

21.5 W

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SWITCHING

SILICON