Loading...

1.6 W Small Signal Field Effect Transistors (FET) 8

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FDC5614PD87Z by Fairchild Semiconductor

FDC5614PD87Z

Fairchild Semiconductor

FDC5614PD87Z by Fairchild Semiconductor is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3A. The transistor operates in enhancement mode and has a max power dissipation of 1.6W at a max operating temperature of 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

STS4DPFS30L by STMicroelectronics

STS4DPFS30L

STMicroelectronics

STS4DPFS30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max operating temperature of 150 °C.

SINGLE WITH BUILT-IN DIODE

30 V

4 A

4 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

NTGS3446T1 by Onsemi

NTGS3446T1

Onsemi

NTGS3446T1 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 5.8A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

5.8 A

2.5 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

100 pF

R-PDSO-G6

e0

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

240

N-CHANNEL

1.6 W

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn80Pb20)

GULL WING

DUAL

30

SWITCHING

SILICON

NTGS1135PT1G by Onsemi

NTGS1135PT1G

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;

ULTRA LOW RESISTANCE

SINGLE WITH BUILT-IN DIODE

8 V

4.6 A

4.6 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STT4PF20V by STMicroelectronics

STT4PF20V

STMicroelectronics

STT4PF20V by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 3 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic circuits.

SINGLE WITH BUILT-IN DIODE

20 V

3 A

3 A

.135 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STT5PF20V by STMicroelectronics

STT5PF20V

STMicroelectronics

STT5PF20V by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

5 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDC6000NZ by Fairchild Semiconductor

FDC6000NZ

Fairchild Semiconductor

FDC6000NZ by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 6.5A Max Drain Current, and 0.02 ohm Max RDS(ON). Operates in ENHANCEMENT MODE with a max temp of 150°C, suitable for surface mount with small outline package style.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6.5 A

7.3 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e4

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.6 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

FLAT

DUAL

SWITCHING

SILICON

DMN2010UDZ-7 by Diodes Incorporated

DMN2010UDZ-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Elements: 2; Maximum Operating Temperature: 150 Cel;

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

24 V

11 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

311 pF

R-PDSO-N6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON