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1.42 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTTD4401FR2 by Onsemi

NTTD4401FR2

Onsemi

NTTD4401FR2 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 2.4A drain current, and 0.09 ohm on-resistance. With a small outline package style and GULL WING terminals, it operates in enhancement mode up to 150 °C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

2.4 A

2.4 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

175 pF

R-PDSO-G8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

1.42 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTTD4401FR2G by Onsemi

NTTD4401FR2G

Onsemi

NTTD4401FR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A, 0.09 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150 °C operating temperature.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

2.4 A

2.4 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

175 pF

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.42 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON