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1.3 W Small Signal Field Effect Transistors (FET) 8

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
N0302P-T1-AT by Renesas Electronics

N0302P-T1-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (ID): 4.4 A;

SINGLE WITH BUILT-IN DIODE

30 V

4.4 A

4.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.3 W

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTGD3133PT1G by Onsemi

NTGD3133PT1G

Onsemi

NTGD3133PT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.5A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a rectangular package and GULL WING terminals for surface mount assembly.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.5 A

1.6 A

.145 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

NTLUD3A260PZTAG by Onsemi

NTLUD3A260PZTAG

Onsemi

NTLUD3A260PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a square package and operates in ENHANCEMENT MODE for efficient performance.

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

1.7 A

1.3 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

1.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NTLUD3A260PZTBG by Onsemi

NTLUD3A260PZTBG

Onsemi

NTLUD3A260PZTBG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a Drain terminal connection and operates in ENHANCEMENT MODE.

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

1.7 A

1.3 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

1.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NTLUF4189NZTAG by Onsemi

NTLUF4189NZTAG

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Case Connection: DRAIN; Maximum Operating Temperature: 150 Cel;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

1.5 A

1.2 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.3 W

Not Qualified

FET General Purpose Power

YES

TIN

NO LEAD

DUAL

SWITCHING

SILICON

NTHS5441T1G by Onsemi

NTHS5441T1G

Onsemi

NTHS5441T1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 3.9A Drain Current, and 0.06 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

3.9 A

3.9 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

C BEND

DUAL

30

SWITCHING

SILICON

DMC25D1UVT-13 by Diodes Incorporated

DMC25D1UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PDSO-G6;

HIGH RELIABILITY

COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

3.9 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

3.3 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.3 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN3023L-13 by Diodes Incorporated

DMN3023L-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; JESD-609 Code: e3;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

30 V

6.2 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

67 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.3 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON