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1.1 W Small Signal Field Effect Transistors (FET) 6

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTHD4401PT1G by Onsemi

NTHD4401PT1G

Onsemi

NTHD4401PT1G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 2.1A max drain current, and 0.155 ohm max on resistance. Operates in enhancement mode with a max temp of 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.1 A

2.1 A

.155 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

R-XDSO-C8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.1 W

Not Qualified

Other Transistors

YES

TIN

C BEND

DUAL

30

SWITCHING

SILICON

NTHD4401PT1 by Onsemi

NTHD4401PT1

Onsemi

NTHD4401PT1 by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include: Max Drain Current of 2.1A, Breakdown Voltage of 20V, and Operating Temp up to 150 °C. Its small outline package makes it suitable for surface mount designs.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.1 A

2.1 A

.155 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

R-XDSO-C8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

1.1 W

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

DMC2057UVT-13 by Diodes Incorporated

DMC2057UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Terminal Position: DUAL; Terminal Form: GULL WING;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

4 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.1 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN3071LFR4-7R by Diodes Incorporated

DMN3071LFR4-7R

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-609 Code: e4; Package Body Material: PLASTIC/EPOXY;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

3.4 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

26 pF

S-PDSO-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.1 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN3071LFR4-7 by Diodes Incorporated

DMN3071LFR4-7

Diodes Incorporated

DMN3071LFR4-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 3.4A ID, and 0.075 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features small outline package, -55 to 150°C operating range, and drain case connection.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

3.4 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

26 pF

S-PDSO-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.1 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN2451UFB4Q-7B by Diodes Incorporated

DMN2451UFB4Q-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-30 Code: R-PBCC-N3; Transistor Element Material: SILICON;

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1.3 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

3.7 pF

R-PBCC-N3

e4

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

1.1 W

AEC-Q101; IATF 16949

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON