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.96 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTS2101PT1 by Onsemi

NTS2101PT1

Onsemi

NTS2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage and 3.7A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.96W. This small outline transistor has a 0.1 ohm on resistance and can withstand temperatures up to 150 °C.

SINGLE WITH BUILT-IN DIODE

8 V

3.7 A

1.4 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.96 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn80Pb20)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTR2101PT1 by Onsemi

NTR2101PT1

Onsemi

NTR2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 3.7A ID, and 0.052 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals, operates up to 150 °C, and has a power dissipation of 0.96W.

SINGLE WITH BUILT-IN DIODE

8 V

3.7 A

3.7 A

.052 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.96 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

IRF5851TRPBF by International Rectifier

IRF5851TRPBF

International Rectifier

IRF5851TRPBF by International Rectifier is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications, operating in enhancement mode. With a max drain current of 2.7A and a min DS breakdown voltage of 20V, it is suitable for various electronic circuits requiring high performance in a small outline package.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.7 A

2.7 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

2

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.96 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON