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.9 W Small Signal Field Effect Transistors (FET) 9

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMG3415U-13 by Diodes Incorporated

DMG3415U-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

20 V

4 A

4 A

.0425 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.9 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

CPH3360-TL-H by Onsemi

CPH3360-TL-H

Onsemi

CPH3360-TL-H by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.6A Drain Current, 0.303 ohm On Resistance, and 150 °C Operating Temperature. Package: PLASTIC/EPOXY, GULL WING terminals in SMALL OUTLINE style.

SINGLE WITH BUILT-IN DIODE

30 V

1.6 A

1.6 A

.303 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e6

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.9 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

GULL WING

DUAL

SWITCHING

SILICON

DMN3115UDM-7 by Diodes Incorporated

DMN3115UDM-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-G6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOW THRESHOLD

SINGLE WITH BUILT-IN DIODE

30 V

3.2 A

3.22 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.9 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

SI2303BDS-T1-GE3 by Vishay Intertechnology

SI2303BDS-T1-GE3

Vishay Intertechnology

SI2303BDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 30V DS breakdown voltage and 1.49A max drain current. Ideal for enhancement mode operation in applications requiring small outline, surface mount transistors with built-in diode, such as power management circuits.

SINGLE WITH BUILT-IN DIODE

30 V

1.49 A

1.49 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.9 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SILICON

NTGD4169FT1G by Onsemi

NTGD4169FT1G

Onsemi

NTGD4169FT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max Drain Current of 2.6A and Drain-Source On Resistance of 0.09 ohm. This ENHANCEMENT MODE transistor operates at up to 150 °C, making it suitable for various electronic devices.

SINGLE WITH BUILT-IN DIODE

30 V

2.6 A

2.6 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.9 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

SI2303BDS-T1-E3 by Vishay Intertechnology

SI2303BDS-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI2303BDS-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 1.49A Drain Current. Ideal for small outline applications, it operates in Enhancement Mode with 0.2 ohm On Resistance, making it suitable for high temperature environments up to 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

1.49 A

1.49 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.9 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

MCH3333A-TL-W by Onsemi

MCH3333A-TL-W

Onsemi

MCH3333A-TL-W by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 0.215 ohm RDS(on), and 2A ID. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. This small outline transistor features a built-in diode and tin bismuth terminal finish.

SINGLE WITH BUILT-IN DIODE

30 V

2 A

.215 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e6

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.9 W

YES

TIN BISMUTH

FLAT

DUAL

30

SWITCHING

SILICON

DMN1150UFL3-7 by Diodes Incorporated

DMN1150UFL3-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-N4; Minimum Operating Temperature: -55 Cel;

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

2 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

23 pF

R-PDSO-N4

e4

2

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.9 W

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMC3730UVT-13 by Diodes Incorporated

DMC3730UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Terminal Finish: MATTE TIN; Package Shape: RECTANGULAR;

ESD PROTECTED, HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

25 V

.46 A

1.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.9 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON