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.83 W Small Signal Field Effect Transistors (FET) 6

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N7002K,215 by NXP Semiconductors

2N7002K,215

NXP Semiconductors

2N7002K,215 by NXP Semiconductors is a small signal FET with N-channel polarity. It operates in enhancement mode for switching applications. With a max drain current of 0.34A and breakdown voltage of 60V, it's ideal for high-power circuits in various electronic devices.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.34 A

.34 A

3.9 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.83 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

2N7002E,215 by NXP Semiconductors

2N7002E,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-236AB; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.385 A

.385 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.83 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

2N7002F,215 by NXP Semiconductors

2N7002F,215

NXP Semiconductors

2N7002F,215 by NXP Semiconductors is a N-CHANNEL FET with a 60V DS breakdown voltage and 0.475A drain current. It is used for switching applications in enhancement mode, featuring a built-in diode and 10pF feedback capacitance. Operating temperature ranges from -65 to 150 °C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.475 A

.475 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.83 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BST72A,112 by NXP Semiconductors

BST72A,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-92; Terminal Position: BOTTOM;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

100 V

.19 A

.19 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.83 W

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

NTGD1100LT1G by Onsemi

NTGD1100LT1G

Onsemi

NTGD1100LT1G by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It has a max drain current of 3.3A, on-resistance of 0.14 ohm, and breakdown voltage of 8V. The package is surface mountable with Gull Wing terminals in a rectangular shape, operating at up to 150°C.

COMPLEX

8 V

3.3 A

3.3 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.83 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTGD1100LT1 by Onsemi

NTGD1100LT1

Onsemi

NTGD1100LT1 by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It features 8V DS Breakdown Voltage, 3.3A Drain Current, and 0.14ohm On Resistance. With Gull Wing terminals and a max temp of 150 °C, it's ideal for compact electronic designs requiring efficient power management.

COMPLEX

8 V

3.3 A

3.3 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL AND P-CHANNEL

.83 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON