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.78 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTQD6866R2 by Onsemi

NTQD6866R2

Onsemi

NTQD6866R2 by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.032ohm max on resistance and can handle up to 0.78W power dissipation at 150 °C.

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6.9 A

4.7 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

175 pF

R-PDSO-G8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.78 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTQD6866R2G by Onsemi

NTQD6866R2G

Onsemi

NTQD6866R2G by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style, operating at up to 150 °C.

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6.9 A

4.7 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

175 pF

R-PDSO-G8

e3

3

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.78 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON