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.74 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TN0604N3-G-P005 by Microchip Technology

TN0604N3-G-P005

Microchip Technology

TN0604N3-G-P005 by Microchip Technology is a N-CHANNEL FET with 40V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.7A Drain Current and 0.75ohm On Resistance. Ideal for low-power circuits requiring high efficiency and reliability.

HIGH INPUT IMPEDANCE

SINGLE WITH BUILT-IN DIODE

40 V

.7 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.74 W

.74 W

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

TN0604N3-G-P013 by Microchip Technology

TN0604N3-G-P013

Microchip Technology

TN0604N3-G-P013 by Microchip Technology is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it has a max drain current of 0.7A and a built-in diode. Operating in enhancement mode, it can handle up to 0.74W power dissipation at temperatures ranging from -55°C to 150°C.

HIGH INPUT IMPEDANCE

SINGLE WITH BUILT-IN DIODE

40 V

.7 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.74 W

.74 W

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

DMN62D0UV-13 by Diodes Incorporated

DMN62D0UV-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .74 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.49 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

2.4 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.74 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON