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.625 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTJS3151PT2 by Onsemi

NTJS3151PT2

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Maximum Drain-Source On Resistance: .06 ohm; Terminal Form: GULL WING;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

2.7 A

2.7 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.625 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

MPF4392G by Onsemi

MPF4392G

Onsemi

MPF4392G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. With a max power dissipation of 0.625W and operating temperature of 150 °C, it is ideal for DEPLETION MODE operation in various electronic circuits.

SINGLE

30 V

60 ohm

JUNCTION

3.5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

MPF4393G by Onsemi

MPF4393G

Onsemi

The Onsemi MPF4393G is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 100 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. This SINGLE configuration transistor operates in DEPLETION MODE with a max power dissipation of 0.625W at 150 °C.

SINGLE

30 V

100 ohm

JUNCTION

3.5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

NVJS3151PT1G by Onsemi

NVJS3151PT1G

Onsemi

NVJS3151PT1G by Onsemi is a P-CHANNEL FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 12V, max drain current of 2.7A, and max operating temp of 150 °C. With a small outline package style and matte tin terminal finish, it offers reliable performance in various electronic devices.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

2.7 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.625 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON