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.33 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N7002WT3G by Onsemi

2N7002WT3G

Onsemi

2N7002WT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.31A Drain Current, and 1.6 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with built-in diode and resistor. Operates in ENHANCEMENT MODE at max temp of 150°C, making it suitable for various electronic devices.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

60 V

.31 A

.31 A

1.6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.33 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

NTS4001NT1 by Onsemi

NTS4001NT1

Onsemi

NTS4001NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, ideal for switching applications. With a min DS breakdown voltage of 30V, it operates in enhancement mode with max drain current of 0.27A and max power dissipation of 0.33W at 150 °C.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

30 V

.27 A

.27 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.33 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON