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.272 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTJD4001NT2G by Onsemi

NTJD4001NT2G

Onsemi

NTJD4001NT2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.25A ID, and 2.5 ohm RDS(on). It is used for SWITCHING applications in small outline packages with GULL WING terminals.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

.25 A

.25 A

2.5 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.272 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTJD4001NT1 by Onsemi

NTJD4001NT1

Onsemi

NTJD4001NT1 by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 30V DS Breakdown Voltage, 0.25A Drain Current, and 2.5 ohm On Resistance. Operating at up to 150 °C, it has a small outline package style suitable for surface mount assembly.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

.25 A

.25 A

2.5 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G6

e0

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.272 W

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

SWITCHING

SILICON

NVTJD4001NT2G by Onsemi

NVTJD4001NT2G

Onsemi

NVTJD4001NT2G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 0.25A Drain Current, and 1.5 ohm Drain-Source Resistance. With a max operating temperature of 150 °C, it is ideal for small outline packages in automotive electronics (AEC-Q101).

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.25 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.272 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON