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.1 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TF414T5G by Onsemi

TF414T5G

Onsemi

TF414T5G by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, suitable for surface mount applications. With a max operating temp of 150 °C and peak reflow temp of 260°C, it features junction technology and nickel palladium gold terminal finish. Ideal for small signal amplification in electronic circuits.

JUNCTION

e4

1

150 Cel

260

N-CHANNEL

.1 W

Other Transistors

YES

NICKEL PALLADIUM GOLD

30

TF202THC-5-TL-H by Onsemi

TF202THC-5-TL-H

Onsemi

TF202THC-5-TL-H by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, 150 °C max temp, and TIN BISMUTH finish. Ideal for surface mount applications in small signal circuits requiring high temperature tolerance.

JUNCTION

e6

1

150 Cel

260

N-CHANNEL

.1 W

Other Transistors

YES

TIN BISMUTH

30