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SEPARATE, 2 ELEMENTS Small Signal Field Effect Transistors (FET) 5

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
LSK489TO-716LROHS by Linear Integrated Systems

LSK489TO-716LROHS

Linear Integrated Systems

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 3 pF;

SEPARATE, 2 ELEMENTS

JUNCTION

3 pF

TO-71

O-XBCY-W6

2

6

DEPLETION MODE

150 Cel

-55 Cel

UNSPECIFIED

ROUND

CYLINDRICAL

N-CHANNEL

.5 W

.5 W

FET General Purpose Small Signal

NO

WIRE

BOTTOM

AMPLIFIER

SILICON

LSK489SOT-236LROHS by Linear Integrated Systems

LSK489SOT-236LROHS

Linear Integrated Systems

LSK489SOT-236LROHS by Linear Integrated Systems is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. Featuring DEPLETION MODE operation, it has 6 terminals in GULL WING shape. With max power dissipation of 0.5W and operating temperature range from -55 to 150 °C, this JUNCTION FET offers high performance in a SMALL OUTLINE package.

SEPARATE, 2 ELEMENTS

JUNCTION

3 pF

R-PDSO-G6

2

6

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.5 W

.5 W

FET General Purpose Small Signal

YES

GULL WING

DUAL

AMPLIFIER

SILICON

WC191 by Solitron Devices

WC191

Solitron Devices

The Solitron Devices WC191 is a P-CHANNEL FET with 30V DS Breakdown Voltage. Featuring 2 elements in a DIE package, it has an RDS(on) of 300 ohm and Crss of 1.5 pF. Ideal for applications requiring low feedback capacitance and high breakdown voltage in enhancement mode operation.

SEPARATE, 2 ELEMENTS

30 V

300 ohm

METAL-OXIDE SEMICONDUCTOR

1.5 pF

DIE-6

2

6

ENHANCEMENT MODE

DIE

NOT SPECIFIED

P-CHANNEL

Not Qualified

NOT SPECIFIED

SILICON

PMBFJ620,115 by NXP Semiconductors

PMBFJ620,115

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .19 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Minimum DS Breakdown Voltage: 25 V;

LOW NOISE

SEPARATE, 2 ELEMENTS

25 V

METAL-OXIDE SEMICONDUCTOR

2.5 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.19 W

Not Qualified

FET General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

DMC3060LVT-13 by Diodes Incorporated

DMC3060LVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; JESD-30 Code: R-PDSO-G6; Operating Mode: ENHANCEMENT MODE;

SEPARATE, 2 ELEMENTS

30 V

3.6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.16 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON