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Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 5

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FA4F4M-T1B-A by Renesas Electronics

FA4F4M-T1B-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 60;

.1 A

60

e6

1

NPN

.2 W

BIP General Purpose Small Signal

YES

TIN BISMUTH

SILICON

FN4L4M-T1B-A by Renesas Electronics

FN4L4M-T1B-A

Renesas Electronics

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 85;

.1 A

85

e6

1

PNP

.2 W

BIP General Purpose Small Signal

YES

TIN BISMUTH

SILICON

CE2A3Q-T-AZ by Renesas Electronics

CE2A3Q-T-AZ

Renesas Electronics

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500; No. of Elements: 1;

2 A

500

1

NPN

1 W

BIP General Purpose Small Signal

NO

SILICON

GA1L4M-T2-A by Renesas Electronics

GA1L4M-T2-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 85; Transistor Element Material: SILICON;

.1 A

85

1

NPN

.15 W

BIP General Purpose Small Signal

YES

SILICON

2SC3624-T1B-A by Renesas Electronics

2SC3624-T1B-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .15 A; No. of Elements: 1;

.15 A

50 V

SINGLE

200

R-PDSO-G3

e6

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN BISMUTH

GULL WING

DUAL

SWITCHING

SILICON

250 MHz