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National Semiconductor Small Signal Bipolar Junction Transistors (BJT) 5

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N3903/D26Z by National Semiconductor

2N3903/D26Z

National Semiconductor

2N3903/D26Z by National Semiconductor is a NPN BJT transistor with VCEsat of 0.2V, hFE of 50, and IC of 0.2A. Ideal for switching applications due to its fast ton of 70ns and toff of 225ns. With a max VCE of 40V and fT of 250MHz, it offers reliable performance in various electronic circuits.

HIGH SPEED SATURATED SWITCHING

.2 A

40 V

SINGLE

50

TO-92

O-PBCY-T3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

225 ns

70 ns

.2 V

BF494D27Z by National Semiconductor

BF494D27Z

National Semiconductor

BF494D27Z by National Semiconductor is a NPN BJT with hFE of 65. It has a single configuration and comes in a cylindrical package. Ideal for low-power applications in electronics due to its silicon transistor element material and through-hole terminal form.

SINGLE

65

TO-92

O-PBCY-T3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SILICON

BF494D74Z by National Semiconductor

BF494D74Z

National Semiconductor

BF494D74Z by National Semiconductor is a NPN BJT with hFE of 65. It has a single configuration and comes in a cylindrical package. Ideal for low-power applications like amplifiers and oscillators due to its small signal capabilities.

SINGLE

65

TO-92

O-PBCY-T3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SILICON

DS2003TMT/NOPB by National Semiconductor

DS2003TMT/NOPB

National Semiconductor

DS2003TMT/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and can handle a max collector-emitter voltage of 55V. With surface mount capability and a max collector current of 0.5A, it's ideal for compact electronic designs.

LOGIC LEVEL COMPATIBLE

.5 A

55 V

COMPLEX

R-PDSO-G16

e3

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

DS2003TMTX/NOPB by National Semiconductor

DS2003TMTX/NOPB

National Semiconductor

DS2003TMTX/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and a max IC of 0.5A. With a VCE of 55V, it is ideal for surface mount designs requiring high-speed switching capabilities.

LOGIC LEVEL COMPATIBLE

.5 A

55 V

COMPLEX

R-PDSO-G16

e3

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON