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65 MHz Small Signal Bipolar Junction Transistors (BJT) 2

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC368ZL1G by Onsemi

BC368ZL1G

Onsemi

BC368ZL1G by Onsemi is a NPN BJT transistor with 1A IC, 20V VCE, and 65MHz fT. Ideal for amplifier applications due to its high hFE of 85 and max power dissipation of 1.5W. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.

1 A

20 V

SINGLE

85

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

65 MHz

BC368G by Onsemi

BC368G

Onsemi

BC368G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1.5W, hFE of 85, and operates up to 150 °C. With a max VCE of 20V and IC of 1A, it offers reliable performance in various electronic circuits.

1 A

20 V

SINGLE

85

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

65 MHz