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450 MHz Small Signal Bipolar Junction Transistors (BJT) 2

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MAT01AHZ by Analog Devices

MAT01AHZ

Analog Devices

MAT01AHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.2V, and hFE of 500. Ideal for applications requiring high DC current gain and low collector-emitter voltage. With a max operating temp of 150 °C, it's suitable for circuits demanding precision and reliability.

LOW NOISE

SUBSTRATE

.025 A

45 V

SEPARATE, 2 ELEMENTS

500

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NPN

1.8 W

1.8 W

Not Qualified

Other Transistors

NO

NICKEL PALLADIUM GOLD

WIRE

BOTTOM

SILICON

450 MHz

.2 V

MAT01GHZ by Analog Devices

MAT01GHZ

Analog Devices

MAT01GHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.25V, and hFE of 250. Ideal for applications requiring high frequency performance up to 450MHz, such as RF amplifiers or oscillators. With a max operating temperature of 150°C and collector-emitter voltage of 45V, it offers reliable performance in various electronic circuits.

LOW NOISE

SUBSTRATE

.025 A

45 V

SEPARATE, 2 ELEMENTS

250

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NPN

1.8 W

1.8 W

Not Qualified

Other Transistors

NO

NICKEL PALLADIUM GOLD

WIRE

BOTTOM

SILICON

450 MHz

.25 V