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340 MHz Small Signal Bipolar Junction Transistors (BJT) 3

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPS6521G by Onsemi

MPS6521G

Onsemi

MPS6521G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 25V and max current of 0.1A. With a min DC current gain of 300, it's ideal for amplifier applications at up to 150 °C operating temperature. The package style is cylindrical with through-hole terminals for easy installation.

LOW NOISE

.1 A

25 V

SINGLE

300

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

340 MHz

MPS6523G by Onsemi

MPS6523G

Onsemi

MPS6523G by Onsemi is a PNP BJT transistor with hFE of 300, fT of 340 MHz, and IC of 0.1 A. Ideal for amplifier applications due to its max power dissipation of 0.625 W and operating temperature up to 150°C in a cylindrical package.

LOW NOISE

.1 A

25 V

SINGLE

300

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

340 MHz

2SAR554P5T100 by ROHM

2SAR554P5T100

ROHM

ROHM 2SAR554P5T100 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1.5A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max fT of 340MHz.

COLLECTOR

1.5 A

15 pF

80 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

TIN

FLAT

SINGLE

10

SWITCHING

SILICON

340 MHz

.4 V