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2.5 W Small Signal Bipolar Junction Transistors (BJT) 5

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSW01ARLRAG by Onsemi

MPSW01ARLRAG

Onsemi

MPSW01ARLRAG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector current of 1A. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C.

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW01ARLRPG by Onsemi

MPSW01ARLRPG

Onsemi

MPSW01ARLRPG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector-emitter voltage of 40V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C, and featuring a nominal transition frequency of 50MHz.

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW01AG by Onsemi

MPSW01AG

Onsemi

MPSW01AG by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1A collector current and 2.5W power dissipation. With a min DC current gain of 50, it operates at temperatures up to 150 °C. Ideal for applications requiring high-speed switching in electronic circuits.

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW01G by Onsemi

MPSW01G

Onsemi

MPSW01G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 30V, such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Sn/Ag/Cu, and max operating temp: 150°C make it versatile for various projects.

1 A

30 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

2.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SILICON

50 MHz

STX13004 by STMicroelectronics

STX13004

STMicroelectronics

STX13004 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact designs.

2 A

400 V

SINGLE

6

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON