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.83 W Small Signal Bipolar Junction Transistors (BJT) 9

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC368,112 by NXP Semiconductors

BC368,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

40 pF

20 V

SINGLE

85

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

170 MHz

.5 V

BC369,112 by NXP Semiconductors

BC369,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

20 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

140 MHz

BC640,112 by NXP Semiconductors

BC640,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

63

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BF421ZL1G by Onsemi

BF421ZL1G

Onsemi

BF421ZL1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.83W, hFE of 50, and can handle up to 300V collector-emitter voltage. With a transition frequency of 60MHz and operating temperature up to 150 °C, it's suitable for various electronic circuits requiring high-speed switching capabilities.

EUROPEAN PART NUMBER

.05 A

300 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.83 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

60 MHz

BF422ZL1G by Onsemi

BF422ZL1G

Onsemi

BF422ZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V, ideal for amplifier applications. It has a min. DC current gain of 50 and max. power dissipation of 0.83W in a cylindrical package style, suitable for through-hole mounting at up to 150 °C operating temperature.

EUROPEAN PART NUMBER

.05 A

250 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

BF423ZL1G by Onsemi

BF423ZL1G

Onsemi

BF423ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.83W, hFE of 50, and VCE of 250V. Ideal for amplifier applications due to its high transition frequency of 60MHz and max. collector current of 0.05A in a cylindrical package style.

EUROPEAN PART NUMBER

.05 A

250 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

BF420ZL1G by Onsemi

BF420ZL1G

Onsemi

BF420ZL1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.05A IC, and 60MHz fT. Ideal for amplifier applications, it has a max power dissipation of 0.83W and operates up to 150 °C. The package is cylindrical with through-hole terminals for easy installation.

EUROPEAN PART NUMBER

.05 A

300 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

BF422RL1G by Onsemi

BF422RL1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): .05 A;

EUROPEAN PART NUMBER

.05 A

250 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

BF423G by Onsemi

BF423G

Onsemi

BF423G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 250V, max power dissipation of 0.83W, and min DC current gain of 50. The package is cylindrical in shape with through-hole terminals made of tin silver copper.

.05 A

250 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz