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.75 W Small Signal Bipolar Junction Transistors (BJT) 3

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
KSD1616GTA by Fairchild Semiconductor

KSD1616GTA

Fairchild Semiconductor

KSD1616GTA by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W and can handle a max collector-emitter voltage of 50V. With a min DC current gain of 200 and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

1 A

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616LBU by Fairchild Semiconductor

KSD1616LBU

Fairchild Semiconductor

KSD1616LBU by Fairchild Semiconductor is a NPN BJT transistor with 1A max collector current, 300 min DC current gain, and 160MHz transition frequency. It is commonly used for switching applications due to its 0.75W power dissipation, 50V max collector-emitter voltage, and -55 to +150°C operating temperature range.

1 A

50 V

SINGLE

300

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616YTA by Fairchild Semiconductor

KSD1616YTA

Fairchild Semiconductor

Fairchild Semiconductor's KSD1616YTA is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W, hFE of 135, and fT of 160MHz. With a max collector-emitter voltage of 50V and operating temp up to 150°C, it suits various electronic designs requiring high-speed switching capabilities in compact cylindrical packages.

1 A

50 V

SINGLE

135

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz