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.125 W Small Signal Bipolar Junction Transistors (BJT) 4

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC857BTT1 by Onsemi

BC857BTT1

Onsemi

BC857BTT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and transition frequency of 100MHz. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for various electronic designs.

.1 A

45 V

SINGLE

220

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.125 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

2SC4617G by Onsemi

2SC4617G

Onsemi

2SC4617G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals.

.1 A

50 V

SINGLE

120

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.125 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

180 MHz

2SC4617T1G by Onsemi

2SC4617T1G

Onsemi

2SC4617T1G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals.

.1 A

50 V

SINGLE

120

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.125 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

180 MHz

2SC4617T1 by Onsemi

2SC4617T1

Onsemi

The Onsemi 2SC4617T1 is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals in a rectangular shape.

.1 A

50 V

SINGLE

120

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.125 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

180 MHz