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.1 W Small Signal Bipolar Junction Transistors (BJT) 57

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
RN2969FE(TE85L,F) by Toshiba

RN2969FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

70

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN49A1FE(TE85L,F) by Toshiba

RN49A1FE(TE85L,F)

Toshiba

NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 2;

.1 A

80

2

NPN AND PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2101ACT(TPL3) by Toshiba

RN2101ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.08 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2102ACT(TPL3) by Toshiba

RN2102ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;

.08 A

50

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2104ACT(TPL3) by Toshiba

RN2104ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1116(TE85L,F) by Toshiba

RN1116(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;

.1 A

50

1

NPN

.1 W

BIP General Purpose Small Signals

YES

SILICON

RN1117(TE85L,F) by Toshiba

RN1117(TE85L,F)

Toshiba

Toshiba's RN1117(TE85L,F) is an NPN BJT transistor with a max power dissipation of 0.1W and min DC current gain of 30. Ideal for surface mount applications, it has a max collector current of 0.1A making it suitable for small signal amplification in electronic circuits.

.1 A

30

1

NPN

.1 W

BIP General Purpose Small Signals

YES

SILICON

RN2303,LF by Toshiba

RN2303,LF

Toshiba

Toshiba's RN2303,LF is a PNP BJT transistor with VCEsat of 0.3V and hFE of 70. Ideal for switching applications, it has a max IC of 0.1A and fT of 200MHz. Its GULL WING terminals make it suitable for surface mount designs in compact electronic devices.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.1 W

.1 W

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

200 MHz

.3 V

RN2305,LF by Toshiba

RN2305,LF

Toshiba

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

BUILT IN BAIS RESISTOR RATIO IS 21.36

.1 A

6 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.1 W

.1 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V