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.3 W RF Small Signal Field Effect Transistors (FET) 7

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
2N4416-E3 by Vishay Intertechnology

2N4416-E3

Vishay Intertechnology

2N4416-E3 by Vishay Intertechnology is an N-CHANNEL FET with 10 dB Gp, operating in DEPLETION MODE. It operates in ULTRA HIGH FREQUENCY BAND for SWITCHING applications. With a max power dissipation of 0.3 W and Crss of 0.8 pF, it's ideal for RF circuits requiring high frequency performance.

LOW NOISE

SINGLE

JUNCTION

.8 pF

ULTRA HIGH FREQUENCY BAND

TO-206AF

O-MBCY-W4

e3

1

1

4

DEPLETION MODE

150 Cel

METAL

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

10 dB

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

BF245A,112 by NXP Semiconductors

BF245A,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; No. of Terminals: 3;

SINGLE

30 V

.025 A

JUNCTION

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BF245B,112 by NXP Semiconductors

BF245B,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; Terminal Finish: MATTE TIN;

SINGLE

30 V

.025 A

JUNCTION

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BF245B,126 by NXP Semiconductors

BF245B,126

NXP Semiconductors

BF245B,126 by NXP Semiconductors is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY. With 0.3W power dissipation and 0.025A Drain Current, it has a max operating temperature of 150°C.

SINGLE

30 V

.025 A

JUNCTION

ULTRA HIGH FREQUENCY BAND

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BF245C,112 by NXP Semiconductors

BF245C,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

SINGLE

30 V

.025 A

JUNCTION

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BF908WR,115 by NXP Semiconductors

BF908WR,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DUAL GATE, DEPLETION MODE; Maximum Feedback Capacitance (Crss): .045 pF;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

.045 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF998WR,115 by NXP Semiconductors

BF998WR,115

NXP Semiconductors

NXP Semiconductors' BF998WR,115 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max drain current of 0.03A and operates in the ULTRA HIGH FREQUENCY BAND. With a package style of SMALL OUTLINE, it can handle up to 150°C operating temperature.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON