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.225 W RF Small Signal Field Effect Transistors (FET) 2

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
MMBF5484LT1G by Onsemi

MMBF5484LT1G

Onsemi

MMBF5484LT1G by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and 3 terminals. With a max power dissipation of 0.225 W, this JUNCTION FET has a temp range of -55 to 150 °C.

SINGLE

JUNCTION

1 pF

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

.225 W

16 dB

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

MMBF4416LT1G by Onsemi

MMBF4416LT1G

Onsemi

MMBF4416LT1G by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage and 10dB power gain, ideal for amplifier applications. It operates in depletion mode at ultra-high frequencies, with a max power dissipation of 0.225W. The transistor features a gull wing terminal form and tin finish, suitable for surface mount configurations in small outline packages.

SINGLE

30 V

JUNCTION

.8 pF

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

10 dB

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON