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8000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 10

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFP193WE6327HTSA1 by Infineon Technologies

BFP193WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Highest Frequency Band: L BAND;

COLLECTOR

.08 A

.9 pF

12 V

SINGLE

L BAND

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

AMPLIFIER

SILICON

8000 MHz

BFR183WH6327XTSA1 by Infineon Technologies

BFR183WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .065 A; Terminal Position: DUAL;

LOW NOISE

.065 A

.7 pF

12 V

SINGLE

L BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

8000 MHz

BFG198,115 by NXP Semiconductors

BFG198,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

10 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFG67,215 by NXP Semiconductors

BFG67,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

HIGH RELIABILITY

COLLECTOR

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFG67/X,215 by NXP Semiconductors

BFG67/X,215

NXP Semiconductors

NXP Semiconductors' BFG67/X,215 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with fT of 8000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 10 V collector-emitter voltage.

HIGH RELIABILITY

COLLECTOR

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

8000 MHz

BFQ67,215 by NXP Semiconductors

BFQ67,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

LOW NOISE, HIGH RELIABILITY

.05 A

10 V

SINGLE

60

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

PBR941,215 by NXP Semiconductors

PBR941,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .05 A;

LOW NOISE, HIGH RELIABILITY

.05 A

10 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.36 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

PBR951,215 by NXP Semiconductors

PBR951,215

NXP Semiconductors

NXP Semiconductors PBR951,215 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 8 GHz and has a max power dissipation of 0.365 W. Ideal for amplifier applications, it can handle a max collector-emitter voltage of 10V at an operating temp of 175°C.

LOW NOISE, HIGH RELIABILITY

.1 A

10 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.365 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

HFA3046BZ96 by Intersil

HFA3046BZ96

Intersil

HFA3046BZ96 by Intersil is an NPN RF BJT with 5 elements and 14 terminals. It operates in the ultra-high frequency band up to 8V, with a transition frequency of 8000MHz. Ideal for amplifier applications, it has a max operating temperature of 150°C and is surface mountable.

LOW NOISE

.037 A

8 V

COMPLEX

40

ULTRA HIGH FREQUENCY BAND

MS-012AB

R-PDSO-G14

e3

3

5

14

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

AT-41500-GP4 by Broadcom

AT-41500-GP4

Broadcom

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .06 A;

LOW NOISE

.06 A

12 V

SINGLE

30

ULTRA HIGH FREQUENCY BAND

S-XUUC-N2

1

1

2

200 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NPN

.5 W

Not Qualified

Other Transistors

YES

NO LEAD

UPPER

AMPLIFIER

SILICON

8000 MHz