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800 MHz RF Small Signal Bipolar Junction Transistors (BJT) 3

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
2SC4774T106S by ROHM

2SC4774T106S

ROHM

ROHM 2SC4774T106S is an NPN BJT transistor for switching applications in the UHF band. Features include VCEsat of 0.3V, hFE of 270, and fT of 800MHz. With a max operating temp of 150°C, it has a small outline package with gull wing terminals for surface mount assembly.

.05 A

1.7 pF

6 V

SINGLE

270

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Silver/Copper (Sn/Ag/Cu)

GULL WING

DUAL

10

SWITCHING

SILICON

800 MHz

.3 V

MMBTH10-4LT1 by Onsemi

MMBTH10-4LT1

Onsemi

MMBTH10-4LT1 by Onsemi is an NPN RF BJT with a max fT of 800 MHz. It has a max IC of 0.025 A and hFE of 120, suitable for UHF applications. This small outline transistor operates up to 150 °C, making it ideal for high-frequency circuits in compact designs.

.025 A

.7 pF

25 V

SINGLE

120

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.3 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

800 MHz

MPSH17G by Onsemi

MPSH17G

Onsemi

The Onsemi MPSH17G is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pd of 0.625W, suitable for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, ideal for high-speed circuit designs.

.9 pF

15 V

SINGLE

25

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

800 MHz