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42000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 5

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BFP740F-E6327 by Infineon Technologies

BFP740F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

.045 A

.14 pF

4 V

SINGLE

160

X BAND

R-PDSO-F4

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.16 W

12.5 dB

Other Transistors

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

42000 MHz

START405TR by STMicroelectronics

START405TR

STMicroelectronics

START405TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.045 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

LOW NOISE

EMITTER

.01 A

4.5 V

SINGLE

C BAND

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.045 W

Not Qualified

BIP RF Small Signal

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

42000 MHz

START499ETR by STMicroelectronics

START499ETR

STMicroelectronics

START499ETR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.6 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

EMITTER

.6 A

4.5 V

SINGLE

C BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

42000 MHz

BFP450H6433XTMA1 by Infineon Technologies

BFP450H6433XTMA1

Infineon Technologies

BFP450H6433XTMA1 by Infineon is a NPN RF BJT with 4V VCEO, 0.15A IC, and 42000MHz fT. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier designs. AEC-Q101 compliant, it features silicon germanium carbon element material and low collector-base capacitance of 0.4pF.

LOW NOISE

.15 A

.4 pF

4 V

SINGLE

X BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

42000 MHz

BFP650FE6327 by Infineon Technologies

BFP650FE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Collector Current (IC): .15 A; Transistor Application: AMPLIFIER;

.15 A

4 V

SINGLE

L BAND

R-PDSO-F4

1

4

150 Cel

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM

42000 MHz