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2500 MHz RF Small Signal Bipolar Junction Transistors (BJT) 3

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BFS17WE6327HTSA1 by Infineon Technologies

BFS17WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;

.025 A

.8 pF

15 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

AMPLIFIER

SILICON

2500 MHz

BFS17SH6327XTSA1 by Infineon Technologies

BFS17SH6327XTSA1

Infineon Technologies

The Infineon Technologies BFS17SH6327XTSA1 is an NPN RF BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 15V, fT of 2500 MHz, and a small outline package style for surface mount assembly.

.025 A

.8 pF

15 V

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

2500 MHz

BFS17WH6327XTSA1 by Infineon Technologies

BFS17WH6327XTSA1

Infineon Technologies

BFS17WH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a nominal transition frequency of 2500MHz. It is commonly used as an amplifier in applications requiring ultra high frequency band performance.

.025 A

.8 pF

15 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

2500 MHz