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.032 W RF Small Signal Bipolar Junction Transistors (BJT) 2

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BFS25A,115 by NXP Semiconductors

BFS25A,115

NXP Semiconductors

NXP Semiconductors' BFS25A,115 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.032 W and operates at up to 175°C. Ideal for L Band applications like amplifiers due to its small outline package and high transition frequency.

LOW NOISE, HIGH RELIABILITY

.0065 A

.45 pF

5 V

SINGLE

50

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.032 W

.032 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT25A,215 by NXP Semiconductors

BFT25A,215

NXP Semiconductors

NXP Semiconductors' BFT25A,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 5000 MHz and hFE of 50, suitable for amplifier applications. The transistor has a max power dissipation of 0.032 W and can handle a collector-emitter voltage of 5V.

HIGH RELIABILITY

.0065 A

.45 pF

5 V

SINGLE

50

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.032 W

.032 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz