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.15 A RF Small Signal Bipolar Junction Transistors (BJT) 8

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFG135,115 by NXP Semiconductors

BFG135,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A;

BUILT-IN EMITTER BALLASTING RESISTORS

COLLECTOR

.15 A

15 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

7000 MHz

BFG35,115 by NXP Semiconductors

BFG35,115

NXP Semiconductors

NXP Semiconductors' BFG35,115 is a NPN RF BJT transistor with 4 terminals. It operates in the ultra-high frequency band up to 4000 MHz and has a max power dissipation of 1W. Ideal for amplifier applications, this transistor features a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

.15 A

18 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

BFQ18A,115 by NXP Semiconductors

BFQ18A,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A;

COLLECTOR

.15 A

18 V

SINGLE

25

S BAND

R-PSSO-F3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Tin (Sn)

FLAT

SINGLE

30

AMPLIFIER

SILICON

4000 MHz

BFP650 by Infineon Technologies

BFP650

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 37000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

HIGH RELIABILITY, LOW NOISE

EMITTER

.15 A

.4 pF

4 V

SINGLE

100

C BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM

37000 MHz

2SC5338-T1-AZ by Renesas Electronics

2SC5338-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .15 A; Transistor Element Material: SILICON;

COLLECTOR

.15 A

2 pF

12 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-F4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

6000 MHz

BFP450H6433XTMA1 by Infineon Technologies

BFP450H6433XTMA1

Infineon Technologies

BFP450H6433XTMA1 by Infineon is a NPN RF BJT with 4V VCEO, 0.15A IC, and 42000MHz fT. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier designs. AEC-Q101 compliant, it features silicon germanium carbon element material and low collector-base capacitance of 0.4pF.

LOW NOISE

.15 A

.4 pF

4 V

SINGLE

X BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

42000 MHz

BFP650E6327HTSA1 by Infineon Technologies

BFP650E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 37000 MHz; Maximum Collector Current (IC): .15 A; Maximum Collector-Base Capacitance: .4 pF;

HIGH RELIABILITY, LOW NOISE

EMITTER

.15 A

.4 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM

37000 MHz

BFP650FE6327 by Infineon Technologies

BFP650FE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Collector Current (IC): .15 A; Transistor Application: AMPLIFIER;

.15 A

4 V

SINGLE

L BAND

R-PDSO-F4

1

4

150 Cel

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM

42000 MHz