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Renesas Electronics RF Power Field Effect Transistors (FET) 6

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
NE5550234-AZ by Renesas Electronics

NE5550234-AZ

Renesas Electronics

NE5550234-AZ by Renesas Electronics is a N-CHANNEL RF Power FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR technology, suitable for applications requiring high-power amplification in surface-mount configurations up to 150°C operating temperature.

SINGLE

.6 A

.6 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

12.5 W

FET General Purpose Powers

YES

NE5550234-T1-AZ by Renesas Electronics

NE5550234-T1-AZ

Renesas Electronics

NE5550234-T1-AZ by Renesas Electronics is a N-CHANNEL RF FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 150°C, ideal for RF power applications requiring high efficiency and reliability in surface mount configurations.

SINGLE

.6 A

.6 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

12.5 W

FET General Purpose Powers

YES

NE5550779A-A by Renesas Electronics

NE5550779A-A

Renesas Electronics

NE5550779A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 2.1A max drain current and 17.8W power dissipation. Ideal for high-power applications in METAL-OXIDE SEMICONDUCTOR technology, it operates up to 150°C, making it suitable for various RF power amplification needs.

SINGLE

2.1 A

2.1 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

17.8 W

FET General Purpose Powers

NE5550779A-T1-A by Renesas Electronics

NE5550779A-T1-A

Renesas Electronics

NE5550779A-T1-A by Renesas Electronics is an N-CHANNEL RF FET with 2.1A max drain current and 17.8W power dissipation. Utilized in applications requiring high-power amplification, it operates up to 150°C, making it suitable for various RF power applications.

SINGLE

2.1 A

2.1 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

17.8 W

FET General Purpose Powers

NE5550979A-A by Renesas Electronics

NE5550979A-A

Renesas Electronics

NE5550979A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W max power dissipation. It operates at up to 150°C, suitable for high-power RF applications in surface-mount configurations.

SINGLE

3 A

3 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

25 W

FET General Purpose Powers

YES

NE5550979A-T1-A by Renesas Electronics

NE5550979A-T1-A

Renesas Electronics

NE5550979A-T1-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W power dissipation. Ideal for high-frequency applications, it operates up to 150°C, making it suitable for various RF power amplification needs in surface-mount configurations.

SINGLE

3 A

3 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

25 W

FET General Purpose Powers

YES