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795 W RF Power Field Effect Transistors (FET) 4

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
STAC2933 by STMicroelectronics

STAC2933

STMicroelectronics

STAC2933 by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR technology transistor offers reliable performance in demanding environments.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

795 W

FET General Purpose Power

YES

NOT SPECIFIED

STAC2943 by STMicroelectronics

STAC2943

STMicroelectronics

STAC2943 by STMicroelectronics is a N-CHANNEL RF Power FET with 40A max drain current and 795W power dissipation. Ideal for high-power applications, it operates at up to 200 °C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR technology offers reliable performance in demanding environments.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

795 W

FET General Purpose Power

YES

NOT SPECIFIED

STAC3933 by STMicroelectronics

STAC3933

STMicroelectronics

STAC3933 by STMicroelectronics is a N-CHANNEL RF Power FET with 20A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. This SINGLE configuration FET uses METAL-OXIDE SEMICONDUCTOR technology and is surface mountable.

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

795 W

FET General Purpose Power

YES

NOT SPECIFIED

STAC4933 by STMicroelectronics

STAC4933

STMicroelectronics

STAC4933 by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in single configuration.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

795 W

FET General Purpose Power

YES

NOT SPECIFIED