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648 W RF Power Field Effect Transistors (FET) 4

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
SD2933W by STMicroelectronics

SD2933W

STMicroelectronics

SD2933W by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 648W. It operates at up to 200 °C, making it suitable for high-power applications in surface-mount configurations.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

648 W

FET General Purpose Powers

YES

NOT SPECIFIED

SD2943W by STMicroelectronics

SD2943W

STMicroelectronics

SD2943W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 648W max power dissipation. Ideal for high-power applications, it operates at up to 200°C and features metal-oxide semiconductor technology.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

648 W

FET General Purpose Power

NOT SPECIFIED

SD3933 by STMicroelectronics

SD3933

STMicroelectronics

SD3933 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and can dissipate up to 648 W. Ideal for high-performance RF amplifiers, it operates efficiently in enhancement mode.

SOURCE

SINGLE

250 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

648 W

Not Qualified

FET General Purpose Power

YES

FLAT

RADIAL

NOT SPECIFIED

SILICON

SD4933 by STMicroelectronics

SD4933

STMicroelectronics

SD4933 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, a breakdown voltage of 200 V, and can dissipate up to 648 W. Ideal for high-performance RF amplification in compact designs.

SOURCE

SINGLE

200 V

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

648 W

Not Qualified

FET General Purpose Power

YES

FLAT

RADIAL

NOT SPECIFIED

SILICON